Korea University team grows centimetre-scale single-crystal graphene on copper foil
A Korea University team led by Professor Lee Ji-hye grew 4 cm × 4 cm single-crystal graphene domains on copper foil via modulated CVD with hydrogen pressure cycling, surpassing the previous ~2.5 cm record, as reported in Nature Nanotechnology. The grain-boundary-free films, compatible with existing industrial CVD reactors, achieve carrier mobilities up to 600,000 cm²/V·s, advancing the viability of large-area defect-free graphene for high-performance electronics.
Researchers at Korea University have developed a method to grow single-crystal graphene domains measuring 4 cm by 4 cm on copper foil. This was achieved using a modulated chemical vapor deposition (CVD) technique with controlled hydrogen pressure cycling. Published in Nature Nanotechnology, this development surpasses the previous record of approximately 2.5 cm. These grain-boundary-free graphene films are valuable for high-performance electronics, as defect-free films can exhibit carrier mobilities up to 600,000 cm squared per V s at 4 K. Professor Lee Ji-hye, who leads the team, noted that the method could be integrated into existing industrial CVD reactors with minor adjustments. Korea University has filed patents in multiple regions, including Korea, the US, China, and Europe. The researchers aim to grow even larger graphene domains, targeting dimensions of 10 cm by 10 cm by mid-2027.
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