Tsinghua publishes scalable CVD process for wafer-scale graphene transfer with <1% defects
Tsinghua University researchers published a CVD process in Nature Materials that produces single-crystal graphene across 12-inch silicon wafers with defect densities below 1%, using a copper-nickel alloy substrate and a dry-transfer method, achieving carrier mobilities above 16,000 cm²/V·s. The process is compatible with existing semiconductor fab infrastructure and has been licensed to SMIC and TSMC, advancing the prospect of graphene integration into commercial microelectronics manufacturing.
Researchers at Tsinghua University have developed a chemical vapor deposition (CVD) process that enables the production of continuous, single-crystal graphene on 12-inch silicon wafers with defect densities below 1%. This advancement, detailed in Nature Materials, tackles a persistent challenge in scaling graphene for microelectronics. The process utilizes a copper-nickel alloy as the growth substrate and introduces a novel dry-transfer technique to prevent polymer contamination common in wet-transfer methods. The graphene films produced exhibit carrier mobilities exceeding 16,000 cm²/V·s and maintain uniformity within ±5% across the entire wafer. Professor Liu Zhongfan, the senior author, noted that this process is compatible with existing semiconductor fabrication infrastructure. Tsinghua University has granted non-exclusive licenses to three companies, including Semiconductor Manufacturing International Corporation (SMIC) and Taiwan Semiconductor Manufacturing Company (TSMC), with integration trials set for early next year.
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