Integration of semiconducting nanoporous graphene in sensing devices
Researchers at ICREA have integrated semiconducting nanoporous graphene into sensing devices, using on-surface synthesis to build architectures that carry a usable bandgap.
Recent advancements in the integration of semiconducting nanoporous graphene into sensing devices highlight its potential in field-effect transistor (FET) platforms. This development comes more than fifteen years after the initial demonstration of on-surface synthesis of graphene nanostructures. Despite numerous new architectures and reaction pathways, only a few materials have been successfully transitioned from ultra-high-vacuum environments to functional devices.
Aitor Mugarza, in a presentation at the Electrochemical Society (ECS) Meeting, discussed the progress in incorporating nanoporous graphene into FETs. The focus was on optimizing domain size and orientation during synthesis, ensuring structural stability across various substrates and environmental conditions, including transfer processes. Additionally, the transport characteristics of the resulting FETs were evaluated both in pristine conditions and when exposed to different gas analytes.
The Electrochemical Society, founded in 1902, continues to advance the theory and practice of electrochemical and solid-state science and technology. This ongoing research into carbon nanomaterials is part of ECS's commitment to fostering innovation in these fields.
Source: Graphene Feed